After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. The chip pattern was successfully obtained by the wet etching process. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing.
The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper CIC) were obtained by the wet etching process.
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